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 Wright Etchant AB Etchant SEMICONDUCTOR DEFECT DELINEATION ETCHANTS For characterization and identification of crystallographic defects in semiconductors. WRIGHT ETCHANT - SILICON AB ETCHANT - GALLIUM ARSENIDE Wright Etchant reveals crystal dislocations, stacking faults, swirls, striations and slip lines. The etchant is applicable to (100) and (111) crystal orientations, for both p and n type crystals over a wide range of resistivities. Both float zone and Czochralski crystals may be characterized. AB Etchant etches the (100) and (110) planes to reveal crystal dislocations, striations, faults, and slip lines. The effectiveness of Wright Etchant and AB Etchant permits superior delineation of crystal defects. Slow etch rates and low exotherm account for precise control. Furthermore, the etched defects exhibit good crystallographic characteristics. PROPERTIES:
CAUTION: Contains Hydrofluoric Acid Use appropriate precautions. Available in quart & gallon polyethylene bottles. Semiconductor Polishing Etchants and Defect Delineation Etchants SILICON POLISHING ETCHANTS Silicon polishing etchants are classical oxidation/reduction formulations designed to provide a slow, controllable anisotropic etch of silicon. Polishing etchants typically operate at 30-50°C. The diffusion-limited etching process requires agitation for an effective polish. SILICON POLISHING ETCHANTS
SEMICONDUCTOR DEFECT DELINEATION ETCHANTS Defect delineation etchants reveal crystal dislocations, striations, slip lines, and faults. Both n and p type semiconductors may be characterized with defect delineation etchants.
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