Tin Oxide
Indium Tin Oxide Etchant TE-100


Tin Oxide/Indium Tin Oxide Etchant TE-100 is a selective etchant for tin oxide and indium tin oxide (ITO) layers in microelectronics applications. TE-100 effectively etches ITO and tin oxide films deposited on ceramics, dielectrics, semiconductors, and many metals. TE-100 provides excellent definition and etch rate control. Broad compatibility with positive and negative photoresists is offered. TE-100 is not compatible with nickel, copper, nichrome, and aluminum.

APPLICATION:

ITO films are best prepared by first depositing a film of indium-tin. The indium-tin film is then oxidized in an oxygen plasma or at elevated temperatures in an oxygenating atmosphere. When etched, indium is solublized as a trivalent aquocomplex [In(H2O)6]3+ while tin forms a [SnCl6]2- anion.


PROPERTIES:

Appearance

Dark amber

Etch Rate @ 25 °C

15-20 Å / sec (immersion)

Operating Temperature

40-50 °C

Rinse

Deionized Water

Storage

20-25 °C

Shelf Life

1 year at 15-25 °C