Tin Oxide/Indium Tin Oxide Etchant TE-100 is a selective etchant for tin oxide and indium tin oxide (ITO) layers in microelectronics applications. TE-100 effectively etches ITO and tin oxide films deposited on ceramics, dielectrics, semiconductors, and many metals. TE-100 provides excellent definition and etch rate control. Broad compatibility with positive and negative photoresists is offered. TE-100 is not compatible with nickel, copper, nichrome, and aluminum.
APPLICATION:
ITO films are best prepared by first depositing a film of indium-tin. The indium-tin film is then oxidized in an oxygen plasma or at elevated temperatures in an oxygenating atmosphere. When etched, indium is solublized as a trivalent aquocomplex [In(H2O)6]3+ while tin forms a [SnCl6]2- anion.
PROPERTIES:
Appearance
Dark amber
Etch Rate @ 25 °C
15-20 Å / sec (immersion)
Operating Temperature
40-50 °C
Rinse
Deionized Water
Storage
20-25 °C
Shelf Life
1 year at 15-25 °C
ETCH PASTE FOR INDIUM TIN OXIDE (ITO) ETCHING
DESCRIPTION:
Transene Solar Etch Paste ITO 126-1 is an un-filled paste based on a proprietary transition metal chemistry and designed for screen printing or dispensing applications. Solar Etch Paste ITO 126-1 offers the advantage of stable viscosity, fine line control, and uniform cure parameters. SEP ITO 126-1 is suitable for use on both PET and glass substrates. Because SEP ITO 126-1 contains no inert filler, optimum clarity and etch control are attainable.
PROPERTIES:
Appearance
Brown Paste
Solids %
80-90
Filler
None
pH
< 7
Bake Temperature
90-100 °C
Bake Time
5 - 15 Mintues
Rinse
Warm Water, Ultrasonic Agitation
Thinner
Glycerine
APPLICATION:
Briefly stir the paste by hand or with mechanical agitation to blend uniformly. A small quantity of glycerine may be added to reduce the viscosity. Apply the paste to the substrate. Allow the part to heat at 90-100 °C for 5-15 minutes. Rinse with warm water. Ultrasonic agitation during rinsing is preferred to remove all traces of etchant.