Transene Tantalum Etchants SIE-8607 and 111 are high purity etchant systems for precise, clean etching of tantalum, tantalum nitride, and tantalum oxide thin films and resists in electronics applications. Tantalum Etchant SIE-8607 is a more aggressive etchant for faster etch rates. Tantalum Etchant 111 is a slower etching solution for optimum control and is more effective for removing tantalum oxide layers. Both etchants are filtered to remove all particulates above 0.2 microns.
PROPERTIES:
Tantalum Etch SIE-8607
Tantalum Etch 111
Appearance
Clear
Clear
Solubility
Infinite in water
Infinite in water
Filtration
0.2 microns
0.2 microns
Operating Temperature
25 °C
25 °C
Etch Rate (Ta), 25 °C
70-80 Å / sec
30-40 Å / sec
Storage
Room Temperature
Room Temperature
Shelf Life
1 year
1 year
Mask Materials
Gold; Positive or Negative Photoresists
Gold; Positive or Negative Photoresists
Rinse
Deionized Water
Deionized water
APPLICATION:
Etch times vary depending on material type (Ta, TaN, or Ta2O5) and purity. Parts to be etched should be placed in etchant solution with mild to moderate mechanical agitation. Tantalum Etchants contain hydrofluoric acid and will attack silicon oxides, titanium, nickel, aluminum, and chromium.