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Nichrome Etchants TFC and TFN

Nichrome Etchants TFN and TFC are designed for etching nichrome thin films in microelectronics applications. Nichrome Etchants are compatible with positive and negative photoresists and provide fine-line control with minimal undercutting. High purity formulations filtered to 0.2 micron are well suited to critical microelectronic applications.

NICHROME ETCHANT TFC
Slower etch rate for precise control.

NICHROME ETHCANT TFN
Minimal undercutting with excellent fine-line control. Consistent operation.

FEATURES:
  • High purity
  • 0.2 micron filtration
  • Compatibility with positive and negative photoresists
  • Fine line control
  • Uniform etch rates
NICHROME ETCHANTS TFC AND TFN
DESCRIPTION:

Transene Nichrome Etchants TFC and TFN are high purity systems based on ceric sulfate and ceric ammonium nitrate, respectively. Nichrome Etchants provide clean, precise etching of evaporated nichrome layers for the preparation of thin film circuits. Nichrome Etchants contain semiconductor grade ingredients for ultra-high purity and are filtered to 0.2 microns to remove particulates.

PROPERTIES:

 

TFC

TFN

Appearance

Clear orange

Clear orange

Chemistry Base

Ceric Sulfate

Ceric Ammonium Nitrate

Specific Gravity

1.09-1.10

1.127-1.130

Filtration

0.2 microns

0.2 microns

Operating Temperature

25 °C

40 °C

Etch Rate

30 Å /sec @ 25 °C

50 Å /sec @ 40 °C

Etch Capacity

168g/gal

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Rinse

1% Sulfuric acid/ deionized water

Deionized water


APPLICATION:

Nichrome Etchants may be operated at room temperature or elevated temperature to increase etch rates. Nichrome Etchant TFC may require a rinse with 1 % sulfuric acid followed by a deionized water rinse to remove etch residue. Nichrome Etchant TFN is an improved formulation which etches more cleanly, eliminating the need for an intermediate rinse.