GALLIUM ARSENIDE ETCHANTS

DESCRIPTION:

Gallium arsenide etchants offer isotropic or anisotropic etching of gallium arsenide and ternary compounds such as gallium indium arsenide and aluminum gallium arsenide. Clean, uniform etching is available in combination with silicon dioxide masks.

Two etching systems are offered. GA Etch 100 is an acidic, isotropic etchant with fast etch rate. GA Etch 300 provides greater versatility, broad photoresist compatibility, and an extended shelf life. All GA Etches require cold storage conditions.

PROPERTIES:

 

GA Etch-100

GA Etch-300

Appearance

Clear, colorless liquid

Clear, colorless liquid

pH

< 2

6-7

Storage Temperature

Ambient

40-50°F

Shelf Life

4 months

6 months

Etch Rate

100 nm/sec @ 40°C

22 Å/sec @ 25°C

Chemistry

Sulfuric-peroxide

Citric acid-peroxide

APPLICATION:

GA Etches may be used in Pyrex, HDPE, Teflon, or other tank materials. Surface smoothness may be controlled by varying the agitation rate. GA Etch 100 is based on sulfuric acid/hydrogen peroxide chemistry. GA Etch 300 utilizes a mildly acidic citric acid-hydrogen peroxide formulation to achieve greater versatility.

Transene's proprietary stabilizer package allows for consistent etch results over a longer time frame than typically available from peroxide chemistries.

All GA Etches are manufactured using high purity raw materials such as semi or ACS Reagent chemicals and 1018 Mohm.cm resistivity deionized water.