Semiconductor and Thin Film Etchants for Microelectronic Circuits
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THIN FILM TRANSENE ETCHANTS OPERATING RANGE RECOMMENDED RESIST APPLICATION
Al ALUMINUM ETCHANTS

TYPE A


TYPE D


TYPE F

@25 °C @ 40 °C


30 Å/sec 80 Å/sec


40 Å/sec 125 Å/sec

Negative*

&

Positive

Semiconductor & Integrated Circuits

GaAs & GaP Devices

AlSi Materials
Al2O3 TRANSETCH N 120 Å/min @ 180 °C SiO2 Semiconductor Devices
BOE BUFFERED OXIDE ETCHANT Variable Negative* &
Positive		 Semiconductor & Integrated Circuits
Cr CHROMIUM ETCHANTS
     Chromium Mask
     TFD
     1020
     1020AC 		@ 40 °C

40 Å/sec
40 Å/sec
32 Å/sec		 Negative*

&

Positive		 Thin Film Circuits
Cr-Si
Cr-SiO		 CHROMIUM CERMET
     TFE		 1000 Å/min @ 50 °C Negative* Thin Film Circuits
Cu COPPER ETCHANTS

CE-100

CE-200

APS-100

Copper Etch 49-1

Copper Etch BTP

1 mil/min @ 50 °C

0.5 mil/min @ 50 °C

80 Å/sec @ 40 °C

Screen Resists

Positive & Negative

P.C.Boards

Thin Film Circuits



Nickel Compatability
FTO Fluorinated Tin Oxide Etchant FTO 100-FBAS 40 Å/sec @ 40 °C Positive and Negative Photovoltaics, Displays
GaAs GALLIUM ARSENIDE

     GA ETCH 100
     GA ETCH 200
     GA ETCH 300
     AB ETCH

100 Å/sec @ 40 °C
20 Å/sec @ 5 °C
22 Å/sec @ 25 °C
Defect Delineation		 Negative Microelectronic Circuits



Semiconductor Testing
GaN GALLIUM NITRIDE

 80 A/min SiO2 LED
Ga2O3 GALLIUM OXIDE 10 Å/sec @ 25 °C Negative Microelectronic Circuits
GaP GALLIUM PHOSPHIDE A Face(Ga):
115 micron/hr @ 80 °C
B Face (P):
210 micron/hr @ 80 °C		 Negative Light Emitting Diodes
Ge GERMANIUM 250 Å/sec @ 20 °C
 Negative*

&

Positive
Semiconductor Devices
Au GOLD ETCHANTS
     TFA
     TFAC
     GE-8148
     GE-8110
     GE-8111
28 Å/sec @ 25 °C
10 Å/sec @ 25 °C
50 Å/sec @ 25 °C
15 Å/sec @ 25 °C
15 Å/sec @ 25 °C
 Negative*

&

Positive

Thin Film Circuits
GaAs compatible
Ni compatible
In2O3
ITO		 INDIUM OXIDE
INDIUM TIN OXIDE		 15 Å/sec @ 25 °C Negative Microelectronic Circuits
InP INDIUM PHOSPHIDE 30 mins @ 25 °C Negative Microelectronic Circuits
Fe2O3 IRON OXIDE MASK
ETCHANT
     ME-10
     ME-30

50 Å/sec @ 25 °C
25 Å/sec @ 25 °C		 Negative*

&

Positive		 Microelectronic Circuits
Polyimide KAPTON POLYIMIDE
ETCHANT		 0.013 mil/min @ 40 °C
0.07 mil/min @ 60 °C		 Negative* &
Positive		 Polyimide/Copper Clad Laminates
Mo MOLY ETCHANT TFM 55 Å/sec @ 30 °C

85 Å/sec @ 60 °C		 Negative* Microelectronic Circuits
Nb
NbN
NbO 		Niobium
Niobium Nitride
Niobium Oxide
 50Å / sec @ 25 oC Negative*
&
Positive 		Microelectronics
Ni-Cr NICHROME ETCHANTS
     TFC
     TFN
20 Å/sec @ 25 °C
50 Å/sec @ 40 °C		 Negative* & Positive Thin Film Circuits
Ni NICKEL ETCHANTS
     TFB
     TFG
     Type I

30 Å/sec @ 25 °C
50 Å/sec @ 40 °C
3 mil/hr @ 40 °C

 Negative* & Positive Thin Film Circuits
Ni-V Nickel-Vanadium Etch
 30 Å/sec @ 20 °C Negative&Positive Microelectronics
Pd PALLADIUM ETCHANTS
     TFP		 110 Å/sec @ 50 °C Negative* & Positive Semiconductor & Thin Film Circuits
Pd PALLADIUM ETCHANT
     EC		     Electrochemical Etching
  REAGENT SEMICONDUCTOR ETCHANTS (RSE)
Ru RUTHENIUM ETCH
 20 Å/sec @ 20 °C Negative&Positive Microelectronics
  SEMICONDUCTOR DEFECT DELINEATION ETCHANTS
Si REAGENT SEMICONDUCTOR ETCHANTS (RSE)

SILICON SLOW ETCH

SILICON MESA ETCH

PREFERENTIAL SILICON ETCHANTS
     PSE 200
     PSE 300

SOLAR CELL ETCHANTS
     SCE-200
     SCE-300

WRIGHT ETCHANT

WRIGHT-JENKINS ETCHANT

SIRTL ETCHANT		 Variable



Variable

Variable



1 mil/3 min @ 100 °C
25 m/hr @ 100 °C


1 hr @ 75-100 °C
5-10 min @ 118 °C

Defect Characterization

Defect Characterization


Defect Characterization



KMER

PKP Type I



<110>
<100>
<110>

<100>


N/A

N/A


N/A 		Semiconductor
Devices


Semiconductor
Devices


MEMS

Semiconductors



Solar Cells


Semiconductor Testing
Semiconductor Testing

Semiconductor Testing
SiC SILICON CARBIDE 80 Å/min Negative LED
SiO2 BUFFER HF IMPROVED

BD ETCHANT

SILOXIDE ETCH

TIMETCH

SILOX VAPOX III

BUFFERED OXIDE ETCHANTS (BOE)		 800Å/min @ 25 °C
Thermally Grown
Variable

40 Å/sec @ 25 °C

90 Å/min @ 25 °C

4000 Å/min @ 22 °C

Variable		 Negative* &
Positive		 Semiconductor & Integrated Circuits
PSG/BSG

CVD

CVD

CVD
SiO SILICON MONOXIDE ETCH
 5000 Å/min @ 85 °C Negative* & Positive Semiconductor Devices
Si3N4 TRANSETCH N 125 Å/min @ 180 °C SiO2 (Silox) Semiconductor & Integrated Circuits
Ag SILVER ETCHANT TFS 200 Å/sec @ 25 °C Negative* & Positive Semiconductor & Thin Film Circuits
Stainless Steel Nickel Etch Type I 45 Å/sec @ 25 °C, AISI 316 Negative* & Positive Alloys
Ta
Ta3N5
Ta2O5		 SIE-8607
Ta Etch 111		 70 Å/sec @ 25 °C
30 Å/sec @ 25 °C		 Negative* & Positive Capacitors
Semiconductors
TaSi Tantalum Silicide Etch
 50 Å/sec @ 20 °C Negative&Positive Thin Film Electronics/TD>
Ti TITANIUM ETCHANTS
     TFT

     TFTN
25 Å/sec @ 20 °C
50 Å/sec @ 30 °C
10 Å/sec @ 70 °C
50 Å/sec @ 85 °C 		Negative* & Positive Integrated Circuits


SiO2 Compatible
TiN Titanium Nitride Etch
 30 Å/sec @ 20 °C Negative&Positive Microelectronics
Ti-W TI-TUNGSTEN ETCHANT TiW-30 20-30 Å/sec Negative* & Positive Thin Film Circuits
Adhesion Layer
W TUNGSTEN ETCH TFW 140 Å/sec @ 30 °C Negative* Integrated Circuits
SnO NESA ETCHANT
TE-100		 0.02 micron/min @ 20 °C Screen Resists Electronic Circuits
  ELECTRONIC GRADE CHEMICALS (SOLVENTS, ACIDS)